Advancing Silicon Carbide Electronics Technology II
Core Technologies of Silicon Carbide Device Processing
Eds. Konstantinos Zekentes and Konstantin Vasilevskiy
Materials Research Foundations Vol. 69
Publication Date 2020, 292 Pages
Print ISBN 978-1-64490-066-6 (release date March, 2020)
ePDF ISBN 978-1-64490-067-3
DOI: 10.21741/9781644900673
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.
Keywords
Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS)
Table of Contents
Historical Introduction to Silicon Carbide Discovery, Properties and Technology
K. Vasilevskiy, N.G. Wright
Dielectrics in Silicon Carbide Devices: Technology and Application
Anthony O’Neill, Oliver Vavasour, Stephen Russell, Faiz Arith, Jesus Urresti, Peter Gammon
Silicon Carbide Doping by Ion Implantation
Philippe Godignon, Frank Torregrosa, Konstantinos Zekentes
Plasma Etching of Silicon Carbide
K. Zekentes, J. Pezoldt, V. Veliadis
Fabrication of Silicon Carbide Nanostructures and Related Devices
M. Bosi, K. Rogdakis, K. Zekentes
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