Plasma Etching of Silicon Carbide
K. Zekentes, J. Pezoldt, V. Veliadis
Plasma etching is the only microelectronics-industry-compatible way to etch SiC for the device pattern transfer process. After more than twenty years of SiC plasma etching technology development, there are still issues such as (i) the etch-rate dependence on plasma parameters, (ii) the surface roughness, (iii) the microtrenching, (iv) the lack of understanding of the very-deep-etching mechanisms, and (v) the not fully understood process optimization that is, in many aspects, based on an empirical approach. The present review deals with all aspects of SiC plasma etching with an emphasis on the above issues that are not well understood.
Keywords
Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Gas Phase Chemistry, Etch Rate, Residue Free Etching, Micromasking, Microtrenching, Sidewall Slope, Mask Selectivity, Aspect Ratio Dependent Etching, Microloading
Published online 2/15/2020, 58 pages
Citation: K. Zekentes, J. Pezoldt, V. Veliadis, Plasma Etching of Silicon Carbide, Materials Research Foundations, Vol. 69, pp 175-232, 2020
DOI: https://doi.org/10.21741/9781644900673-4
Part of the book on Advancing Silicon Carbide Electronics Technology II
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