A new view on the solution of rate-independent crystal plasticity finite element models

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A new view on the solution of rate-independent crystal plasticity finite element models

NIJHUIS Björn, PERDAHCIOĞLU Semih, VAN DEN BOOGAARD Ton

Abstract. The crystal plasticity finite element method (CP-FEM) readily enables microstructure-based material modelling by relating macroscopic plastic deformation to dislocation slip on crystal slip systems. Rate-independent CP models provide physically accurate solutions by allowing slip only if the resolved shear stress on a slip system equals the critical resolved shear stress. However, computing the amount of slip for such models remains challenging. This work proposes a novel stable and efficient stress-update algorithm based on fixed-point iterations. These iterations trace the hypersurfaces that describe the slip state for which individual slip system’s yield functions are zero, until all slip system hypersurfaces intersect. This simultaneously provides the set of active slip systems and the slip on these systems, avoiding the need for an iterative active set search algorithm without inducing spurious slip on systems on which the shear stress is below the critical resolved shear stress.

Keywords
Crystal Plasticity, Stress Update Algorithm, Active Set, Fixed-Point Iterations

Published online 4/24/2024, 10 pages
Copyright © 2024 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA

Citation: NIJHUIS Björn, PERDAHCIOĞLU Semih, VAN DEN BOOGAARD Ton, A new view on the solution of rate-independent crystal plasticity finite element models, Materials Research Proceedings, Vol. 41, pp 2144-2153, 2024

DOI: https://doi.org/10.21741/9781644903131-236

The article was published as article 236 of the book Material Forming

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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