The Boron Arsenides
David J. Fisher
Materials Research Foundations Vol. 138
Publication Date 2023, 117 Pages
Print ISBN 978-1-64490-222-6 (release date January 2023)
ePDF ISBN 978-1-64490-223-3
DOI: 10.21741/9781644902236
Boron Arsenide offers very interesting electronic properties, as well as a high thermal conductivity; nearly 10 times higher than that of silicon. It has been hailed as ‘the best semiconductor material ever found’. The present book presents a detailed review of this material and its potential applications. The materials covered include Icosahedral Boron Arsenide, Hexagonal Boron Arsenide, Amorphous Boron Arsenide and Cubic Boron Arsenide. The book references 166 original resources with their direct web links for in-depth reading.
Keywords
Boron Arsenides, Electron Mobility, Hole Mobility, Band-gap, Monolayers, Defects, Mechanical Properties, Photo-electrodes, Thermal Conductivity, Heat-spreading
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About the Author
Dr. Fisher has wide knowledge and experience of the fields of engineering, metallurgy and solid-state physics, beginning with work at Rolls-Royce Aero Engines on turbine-blade research, related to the Concord supersonic passenger-aircraft project, which led to a BSc degree (1971) from the University of Wales. This was followed by theoretical and experimental work on the directional solidification of eutectic alloys having the ultimate aim of developing composite turbine blades. This work led to a doctoral degree (1978) from the Swiss Federal Institute of Technology (Lausanne). He then acted for many years as an editor of various academic journals, in particular Defect and Diffusion Forum. In recent years he has specialized in writing monographs which introduce readers to the most rapidly developing ideas in the fields of engineering, metallurgy and solid-state physics. He is co-author of the widely-cited student textbook, Fundamentals of Solidification, a new (5th fully-revised) edition of which is soon to appear. Google Scholar credits him with 8489 citations and a lifetime h-index of 14.
