Status and Prospects of SiC Power Devices
M. Bakowski
SiC power devices offer significant benefits of improved efficiency, dynamic performance and reliability in energy conversion systems. The challenges and prospects of different types of SiC devices including material and technology constraints on the device performance are reviewed. The on-state voltage and on-resistance of SiC unipolar and bipolar devices in the voltage range up to 30 kV has been determined by device simulations. System benefits and remaining challenges of SiC power electronics are summarized. Major reliability challenges of SiC power devices are reviewed and exemplified.
Keywords
Silicon Carbide, Power Devices, Unipolar, Bipolar, System Benefits, Status, Trends, Reliability
Published online 9/1/2018, 46 pages
DOI: https://dx.doi.org/10.21741/9781945291852-4
Citation: M. Bakowski, Status and Prospects of SiC Power Devices, in: Advancing Silicon Carbide Electronics Technology I, K. Zekentes, K. Vasilevskiy (Eds.), Materials Research Forum LLC, Millersville, 2018, pp 191-236
Part of the book on Advancing Silicon Carbide Electronics Technology I
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