Schottky Contacts to Silicon Carbide: Physics, Technology and Applications
F. Roccaforte, G. Brezeanu, P. M. Gammon, F. Giannazzo, S. Rascunà, M. Saggio
Understanding the physics and technology of Schottky contacts to Silicon Carbide is important, for both academic and industrial researchers. In fact, the rectifying contact is a tool for studying carrier transport at metal/semiconductor interfaces, as well as forming the main building block of the Schottky Barrier Diode. In this chapter, the physics of metal/SiC rectifying contacts and the technology of 4H-SiC Schottky diodes are reviewed, presenting a survey of relevant results on this topic, from fundamental concepts of Schottky barriers, to practical information for real device fabrication. Selected examples of 4H-SiC Schottky diodes applications are also briefly discussed.
Keywords
Silicon Carbide, Schottky Contact, Barrier Height, Diode, Wide Band Gap Power Electronics
Published online 9/1/2018, 64 pages
DOI: https://dx.doi.org/10.21741/9781945291852-3
Citation: F. Roccaforte, G. Brezeanu, P. M. Gammon, F. Giannazzo, S. Rascunà, M. Saggio, Schottky Contacts to Silicon Carbide: Physics, Technology and Applications, in: Advancing Silicon Carbide Electronics Technology I, K. Zekentes, K. Vasilevskiy (Eds.), Materials Research Forum LLC, Millersville, 2018, pp 127-190
Part of the book on Advancing Silicon Carbide Electronics Technology I
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