Processing and Characterisation of Ohmic Contacts to Silicon Carbide
K. Vasilevskiy, K. Zekentes, N. Wright
This chapter reports on formation and characterization of ohmic contacts to silicon carbide. At first, the theory of ohmic contacts is briefly described with special attention to dependence of contact resistance on semiconductor parameters and to the differences between ohmic contacts to silicon carbide and silicon. Then, different contact resistivity measurement techniques are discussed with primary emphasis upon the transfer length method (TLM). TLM limitations, accuracy and optimized test structure design are considered in detail. Recent progress in the development of ohmic contacts is reviewed with more detailed description of commonly used nickel and aluminum-titanium contacts to n- and p-type silicon carbide, respectively. Protection, overlaying and thermal stability of ohmic contacts to SiC are discussed as well as compatibility of ohmic contacts formation with SiC device processing. Finally, the requirements to further improvements in ohmic contacts fabrication and characterization are outlined.
Keywords
Silicon Carbide, Ohmic Contact, Transition Line Model, Transfer Length Method, Contact Resistivity, Metal Silicides, Metal Carbides, Diffusion Barrier, Schottky Barrier, High Temperature Electronics
Published online 9/1/2018, 100 pages
Citation: K. Vasilevskiy, K. Zekentes, N. Wright, Processing and Characterisation of Ohmic Contacts to Silicon Carbide, in: Advancing Silicon Carbide Electronics Technology I, K. Zekentes, K. Vasilevskiy (Eds.), Materials Research Forum LLC, Millersville, 2018, pp 27-126
DOI: https://dx.doi.org/10.21741/9781945291852-2
Part of the book on Advancing Silicon Carbide Electronics Technology I
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