N. GUENIFI, R. MAHAMDI, I. RAHMANI
Abstract. Silicon oxide (SiO2) is a good dielectric material in metal-oxide-semiconductor (MOS) structures. The improved SiO2 quality requires adequate study of doping diffusion in this structure to maintain the absence of the different impurities in the interface Poylsilicon/SiO2. For this we studied a theoretical model of boron diffusion before and after thermal annealing in a highly doped polysilicon films. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations. Based on the literature the model is solved using the engineering software tool MATLAB, following a well-defined algorithm. The model is validated with the help of simulation results obtained from Silvaco.
Keywords
Polysilicon, SiO2, Boron, Redistribution, Finite Differences Method, Silvaco
Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: N. GUENIFI, R. MAHAMDI, I. RAHMANI, ‘Modeling and optimization techniques of boron diffusion parameters in MOS transistor using SILVACO ATHENA and Matlab’, Materials Research Proceedings, Vol. 1, pp 75-78, 2016
DOI: https://dx.doi.org/10.21741/9781945291197-19
The article was published as article 19 of the book Dielectric Materials and Applications
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