Stress in Thin Wall Structures Made by Layer Additive Manufacturing
V. Luzin, N. Hoye
download PDFAbstract. Manufacturing of thin wall structures is one of the main applications of additive manufacturing, where it has significant advantages over traditional milling and machining techniques or welded analogues. Such thin walled structures are common in structural aerospace components, and are also frequently made from titanium alloys. For such large-scale components, layer deposition strategy is more advantageous rather than a pixel-wise deposition approach due to the demand for high productivity and size requirements. Several techniques can be used to produce layer-wise build-ups, including laser-powered Direct Metal Deposition (DMD) process or gas tungsten arc welding (GTAW). Although, in the general case of arbitrary thin wall structures the stress distribution is complex, for some simple geometries, the stress state is simple and can be well characterized within a model by a single parameter representing a layer deposition stress in the steady-state regime. The model calculations were verified by experimental results on a thin-walled sample component that was manufactured from Ti-6Al-4V by GTAW with the residual stresses measured using KOWARI neutron strain scanner at the OPAL research reactor (ANSTO).
Keywords
Residual Stress, Additive Manufacturing, Titanium
Published online 12/22/2016, 6 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: V. Luzin, N. Hoye, ‘Stress in Thin Wall Structures Made by Layer Additive Manufacturing’, Materials Research Proceedings, Vol. 2, pp 497-502, 2017
DOI: https://dx.doi.org/10.21741/9781945291173-84
The article was published as article 84 of the book Residual Stresses 2016
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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