Structural and Thermal Performance Analysis of (In,Ga)N p–i–n Homojunction Solar Cells
Hassan ABBOUDI, Ilyass EZ-ZEJJARI, Haddou EL GHAZI, Redouane EN-NADIR, Redouane SERSAR, Walid BELAID, Ahmed SALI
Abstract. This study examines the combined influence of intrinsic layer thickness and temperature on the performance of (In,Ga)N-based p–i–n solar cells using SCAPS-1D simulation. The structure, composed of p-In_0.6 Ga_0.4 N/i-In_x Ga_(1-x) N/n-In_0.48 Ga_0.52 N layers, is analyzed under 300K and 400 K to assess thermal effects on carrier transport and recombination. The optimal performance was obtained for an indium molar fraction of x = 0.59. The Results reveal that the thickness engineering significantly enhances current generation up to ~ 0.5 µm, beyond which absorption saturation limits further improvement. While V_oc and FF remain nearly thickness-independent, both degrade with rising temperature due to thermally activated recombination. Overall, the conversion efficiency benefits from optimal intrinsic layer thickness and controlled operating temperature, highlighting the importance of structural and thermal optimization for high-performance (In,Ga)N-based solar cells.
Keywords
p-i-n Photovoltaic Cells, Intrinsic Layer, Temperature, Efficiency
Published online 4/25/2026, 9 pages
Copyright © 2026 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: Hassan ABBOUDI, Ilyass EZ-ZEJJARI, Haddou EL GHAZI, Redouane EN-NADIR, Redouane SERSAR, Walid BELAID, Ahmed SALI, Structural and Thermal Performance Analysis of (In,Ga)N p–i–n Homojunction Solar Cells, Materials Research Proceedings, Vol. 64, pp 615-623, 2026
DOI: https://doi.org/10.21741/9781644904091-77
The article was published as article 77 of the book Energy Futures
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
References
[1] X. Huang et al., “High-temperature polarization-free III-nitride solar cells with self-cooling effects,” ACS Photonics, vol. 6, no. 8, pp. 2096-2103, 2019. https://doi.org/10.1021/acsphotonics.9b00655
[2] J. J. Williams et al., “Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016: IEEE, pp. 0193-0195. https://doi.org/10.1109/PVSC.2016.7749576
[3] D. J. Sirbuly, M. Law, H. Yan, and P. Yang, “Semiconductor nanowires for subwavelength photonics integration,” vol. 109, ed: ACS Publications, 2005, pp. 15190-15213. https://doi.org/10.1021/jp051813i
[4] F. Ponce and D. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” nature, vol. 386, no. 6623, pp. 351-359, 1997. https://doi.org/10.1038/386351a0
[5] L. E. Bain and A. Ivanisevic, “Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II‐VI and III‐V Semiconductor Materials,” Small, vol. 11, no. 7, pp. 768-780, 2015. https://doi.org/10.1002/smll.201401450
[6] S. Nakamura, T. Mukai, and M. Senoh, “Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes,” Applied Physics Letters, vol. 64, no. 13, pp. 1687-1689, 1994. https://doi.org/10.1063/1.111832
[7] U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, “GaN-based RF power devices and amplifiers,” Proceedings of the IEEE, vol. 96, no. 2, pp. 287-305, 2008. https://doi.org/10.1109/JPROC.2007.911060
[8] L. Vilbois, A. Cheknane, A. Bensaoula, C. Boney, and T. Benouaz, “Simulation of a solar cell based on InGaN,” Energy Procedia, vol. 18, pp. 795-806, 2012. https://doi.org/10.1016/j.egypro.2012.05.095
[9] R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Applied Physics Letters, vol. 70, no. 9, pp. 1089-1091, 1997. https://doi.org/10.1063/1.118493
[10] S. Routray and T. Lenka, “InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century,” CSI Transactions on ICT, vol. 6, no. 1, pp. 83-96, 2018. https://doi.org/10.1007/s40012-017-0181-9
[11] O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN∕ InGaN solar cells,” Applied Physics Letters, vol. 91, no. 13, 2007. https://doi.org/10.1063/1.2793180
[12] C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Applied Physics Letters, vol. 93, no. 14, 2008. https://doi.org/10.1063/1.2988894
[13] H. Abboudi et al., “Optimization of InxGa1− xN PIN Solar Cells: Achieving 21% Efficiency Through SCAPS-1D Modeling,” Crystals, vol. 15, no. 7, p. 633, 2025. https://doi.org/10.3390/cryst15070633
[14] T. Ouslimane, L. Et-Taya, L. Elmaimouni, and A. Benami, “Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material,” Heliyon, vol. 7, no. 3, 2021. https://doi.org/10.1016/j.heliyon.2021.e06379
[15] M. Minbashi, A. Ghobadi, M. H. Ehsani, H. Rezagholipour Dizaji, and N. Memarian, “Simulation of high efficiency SnS-based solar cells with SCAPS,” Solar Energy, vol. 176, pp. 520-525, 2018/12/01/ 2018. https://doi.org/10.1016/j.solener.2018.10.058
[16] I. Vurgaftman and J. n. Meyer, “Band parameters for nitrogen-containing semiconductors,” Journal of applied physics, vol. 94, no. 6, pp. 3675-3696, 2003. https://doi.org/10.1063/1.1600519
[17] Y. Varshni, “Band-to-Band Radiative Recombination in Groups IV, VI,” February 1, vol. 19, p. 459, 2022. https://doi.org/10.1515/9783112498309-001
[18] Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica, vol. 34, no. 1, pp. 149-154, 1967/01/01/ 1967. https://doi.org/10.1016/0031-8914(67)90062-6
[19] H. Abboudi et al., “Enhancing the Photovoltaic Efficiency of In0.2Ga0.8N/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic Fields,” Materials, vol. 17, no. 21, p. 5219, 2024. [Online]. Available: https://www.mdpi.com/1996-1944/17/21/5219. https://doi.org/10.3390/ma17215219
[20] H. Abboudi et al., “Tuning Intermediate Band Solar Cell Efficiency: The Interplay of Electric Fields, Composition, Impurities, and Confinement,” Nanomaterials, vol. 14, no. 22, p. 1858, 2024. [Online]. Available: https://www.mdpi.com/2079-4991/14/22/1858. https://doi.org/10.3390/nano14221858
[21] C. A. M. Fabien and W. A. Doolittle, “Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells,” Solar Energy Materials and Solar Cells, vol. 130, pp. 354-363, 2014/11/01/ 2014. https://doi.org/10.1016/j.solmat.2014.07.018
