The effect of fluoride based salt etching in the synthesis of Mxene

The effect of fluoride based salt etching in the synthesis of Mxene

DINESH Rao Prakas Rao, DINESH Sivanesan, SITI Nur Azella Zaine

Abstract. Here we reported the effect of fluoride-based salt etching in the synthesis of Ti3C2 MXene by etching Ti3AlC2 MAX phase precursor. Lithium fluoride (LiF) and ammonium fluoride were the fluoride-based salts were chosen as an etching agent in this study. The optimum etchant concentration and etching temperature of the MAX phase were evaluated. The presence of aluminium etched was determined by using the Inducted Couple Plasma Optical Emission Spectrometry (ICP-OES). The initial concentration of aluminium in Ti3AlC2 precursor was estimated based on the data from Energy Dispersive X-Ray Analysis (EDX). The study shows that the optimum etchant concentration of LiF is 5M and NH4F is 3M. Room temperature is the optimum etching temperature due to the exothermic reaction of the process. Compared to LiF, NH4F is the preferred salt for in-situ HF fluoride-based salt etchant due to the capability of the salt to etch the maximum amount of Al at a low concentration of 3M within 24 hours at room temperature.

Keywords
Titanium Aluminium Carbide, MXene, Fluoride-Based Salt Etching, In-situ HF, Green Etching Process

Published online 5/20/2023, 7 pages
Copyright © 2023 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA

Citation: DINESH Rao Prakas Rao, DINESH Sivanesan, SITI Nur Azella Zaine, The effect of fluoride based salt etching in the synthesis of Mxene, Materials Research Proceedings, Vol. 29, pp 59-65, 2023

DOI: https://doi.org/10.21741/9781644902516-8

The article was published as article 8 of the book Sustainable Processes and Clean Energy Transition

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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