Prediction of surface topography change during chain of selective laser melting and burnishing

Prediction of surface topography change during chain of selective laser melting and burnishing

TEIMOURI Reza, SKOCZYPIEC Sebastian, GRABOWSKI Marcin

Abstract. The present study developed theoretical models for simulation of surface topography and roughness of parts produced by the selective laser melting (SLM) process and their evolution after burnishing as post-treatment. The simulation algorithm has been integrated by combining principles of selective laser melting process, i.e., formation of the melt pool and kinematic of motion, followed by mechanic of burnishing through Z-map approach. To verify the simulation results, 316L stainless steel was 3D printed and then burnished under different burnishing depth. 3D surface profile and surface roughness of as-printed material and those post-processed by surface burnishing (SB) were measured through microscopic examination and surface roughness measurement, respectively. The results obtained through comparison of confirmatory experiments and simulation model affirmed that the proposed approach is accurate enough to predict the surface topography and roughness of as-printed and post-treated samples.

Keywords
Surface Roughness, Selective Laser Melting, Burnishing, Simulation

Published online 4/19/2023, 10 pages
Copyright © 2023 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA

Citation: TEIMOURI Reza, SKOCZYPIEC Sebastian, GRABOWSKI Marcin, Prediction of surface topography change during chain of selective laser melting and burnishing, Materials Research Proceedings, Vol. 28, pp 31-40, 2023

DOI: https://doi.org/10.21741/9781644902479-4

The article was published as article 4 of the book Material Forming

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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