S. GOUDER, L. TEBESSI, R. MAHAMDI, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER
Abstract. Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by high resolution X-ray diffraction and transmission electron microscopy. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Keywords
Double Layer, Porous Silicon, Molecular Beam Epitaxy, Transmission Electron Microscopy, High Resolution X-Ray Diffraction
Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: S. GOUDER, L. TEBESSI, R. MAHAMDI, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER, ‘TEM and XRD characterizations of epitaxial silicon layer fabricated on double layer porous silicon’, Materials Research Proceedings, Vol. 1, pp 249-252, 2016
DOI: https://dx.doi.org/10.21741/9781945291197-62
The article was published as article 62 of the book Dielectric Materials and Applications
References
[1] V. Y. Yerekhov, and I. I. Melnyk, “Porous silicon in solar cell structures: a review of achievements and modern directions of further use,” renew. Sustainable Energy, vol. 3, pp. 291-322, December 1999. https://dx.doi.org/10.1016/S1364-0321(99)00005-2
[2] K. Imal, “FIPOS (Full Isolation by Porous Oxidized Silicon) Technology and its applications to LSI’S” Electron Devices, IEEE Transactions, Vol. 31, PP. 297-302, March 1994.
[3] T. Yonehare, K. Sakagushi, and N. Sato, “Epitaxial layer transfer by bond and etch back of porous Si,” Appl. Phys. Lett, vol. 64, pp. 2108-2110, January 1994. https://dx.doi.org/10.1063/1.111698
[4] S. Gouder, R. Mahamdi, M. Aouassa, S. Escoubas, L. Favre, A. Ronda, and I. Berbezier. “Investigation of microstructure and morphology for the Ge on Porous Silicon/Si substrate hetero-structure obtained by Molecular Beam Epitaxy”. Thin solid Films, vol. 550, pp 233-238, 2014. https://dx.doi.org/10.1016/j.tsf.2013.10.183
[5] I. Berbezier, J.M. Martin, C. Bernardi, J. Derrien, “EELS investigation of luminescent nanoporous p-type silicon,” Appl. Surf. Sci. Vol. 102, pp. 417-422, 1996. https://dx.doi.org/10.1016/0169-4332(96)00090-6
